2N3773
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- Mfr.Part #
- 2N3773
- Manufacturer
- Microchip Technology
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 28,061
- In Stock ：
- 28,061
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 2
- Published :
- 2004
- Contact Plating :
- Tin
- Terminal Position :
- BOTTOM
- Collector Emitter Voltage (VCEO) :
- 140V
- hFE Min :
- 15
- Package / Case :
- TO-204AA, TO-3
- Radiation Hardening :
- No
- Factory Lead Time :
- 10 Weeks
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 1.4V
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 10mA
- Weight :
- 13.607771g
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Pin Count :
- 2
- Operating Temperature :
- -65°C~200°C TJ
- Collector Base Voltage (VCBO) :
- 160V
- Emitter Base Voltage (VEBO) :
- 7V
- Base Part Number :
- 2N3773
- Power Dissipation :
- 150W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 140V
- Terminal Form :
- PIN/PEG
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Voltage - Rated DC :
- 140V
- Height :
- 8.51mm
- Max Power Dissipation :
- 150W
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 8A 4V
- Number of Terminations :
- 2
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Length :
- 39.37mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 26.67mm
- Current Rating :
- 16A
- Surface Mount :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1.4V @ 800mA, 8A
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tray
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Max Collector Current :
- 16A
- Datasheets
- 2N3773
NPN -65°C~200°C TJ 10mA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
2N3773G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 8A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.4V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.4V @ 800mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 16A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 16A volts.
2N3773G Features
the DC current gain for this device is 15 @ 8A 4V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 1.4V @ 800mA, 8A
the emitter base voltage is kept at 7V
the current rating of this device is 16A
2N3773G Applications
There are a lot of ON Semiconductor
2N3773G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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