2N3773
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- Mfr.Part #
- 2N3773
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 140V 16A TO204
- Stock
- 412
- In Stock ：
- 412
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 150W
- Current Rating :
- 16A
- Voltage - Rated DC :
- 140V
- Collector Base Voltage (VCBO) :
- 160V
- Case Connection :
- COLLECTOR
- Terminal Position :
- BOTTOM
- Weight :
- 13.607771g
- Pin Count :
- 2
- Package / Case :
- TO-204AA, TO-3
- Number of Pins :
- 2
- Width :
- 26.67mm
- Surface Mount :
- No
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Power Dissipation :
- 150W
- Factory Lead Time :
- 10 Weeks
- Length :
- 39.37mm
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 8A 4V
- Emitter Base Voltage (VEBO) :
- 7V
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 140V
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 10mA
- Published :
- 2004
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Number of Terminations :
- 2
- Base Part Number :
- 2N3773
- hFE Min :
- 15
- Terminal Form :
- PIN/PEG
- JESD-609 Code :
- e3
- Max Collector Current :
- 16A
- Operating Temperature :
- -65°C~200°C TJ
- Transistor Type :
- NPN
- Packaging :
- Tray
- Element Configuration :
- Single
- Height :
- 8.51mm
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1.4V @ 800mA, 8A
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 1.4V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 140V
- Mounting Type :
- Through Hole
- Datasheets
- 2N3773
NPN -65°C~200°C TJ 10mA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
2N3773G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 8A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.4V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.4V @ 800mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 16A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 16A volts.
2N3773G Features
the DC current gain for this device is 15 @ 8A 4V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 1.4V @ 800mA, 8A
the emitter base voltage is kept at 7V
the current rating of this device is 16A
2N3773G Applications
There are a lot of ON Semiconductor
2N3773G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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