2N3771
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- Mfr.Part #
- 2N3771
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 30A TO3
- Stock
- 48
- In Stock ：
- 48
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 15
- Voltage - Rated DC :
- 40V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 150W
- Width :
- 26.67mm
- Package / Case :
- TO-204AA, TO-3
- Surface Mount :
- No
- Height :
- 8.51mm
- Number of Terminations :
- 2
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Terminal Form :
- PIN/PEG
- Max Power Dissipation :
- 150W
- Operating Temperature :
- -65°C~200°C TJ
- Max Collector Current :
- 30A
- Current - Collector Cutoff (Max) :
- 10mA
- Gain Bandwidth Product :
- 200 kHz
- Transistor Application :
- SWITCHING
- Length :
- 39.37mm
- Frequency :
- 200kHz
- Number of Pins :
- 2
- Mounting Type :
- Through Hole
- Pin Count :
- 2
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 40V
- Current Rating :
- 30A
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 6A, 30A
- Polarity/Channel Type :
- NPN
- Base Part Number :
- 2N3771
- JESD-609 Code :
- e3
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 15A 4V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 2V
- Case Connection :
- COLLECTOR
- Published :
- 2000
- Collector Emitter Breakdown Voltage :
- 40V
- Transistor Type :
- NPN
- Weight :
- 4.535924g
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 0.2MHz
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Packaging :
- Tray
- Factory Lead Time :
- 2 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 50V
- Datasheets
- 2N3771
NPN -65°C~200°C TJ 10mA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
2N3771G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 15 @ 15A 4V DC current gain.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 0.2MHz in the part.When collector current reaches its maximum, it can reach 30A volts.
2N3771G Features
the DC current gain for this device is 15 @ 15A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 6A, 30A
the emitter base voltage is kept at 5V
the current rating of this device is 30A
a transition frequency of 0.2MHz
2N3771G Applications
There are a lot of ON Semiconductor
2N3771G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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