2N3747

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Mfr.Part #
2N3747
Manufacturer
Microchip Technology
Package / Case
TO-111-4, Stud
Datasheet
Download
Description
POWER BJT
Stock
43,740
In Stock :
43,740

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Element Material :
SILICON
Product Category :
Bipolar Transistors - BJT
Terminal Position :
UPPER
Manufacturer :
Microchip
Subcategory :
Transistors
JESD-30 Code :
O-MUPM-D4
Package :
Bulk
Terminal Form :
Solder Lug
Power Dissipation-Max (Abs) :
30 W
Number of Terminals :
4
VCEsat-Max :
0.25 V
Pin Count :
4
Case Connection :
Isolated
Transistor Type :
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce :
-
Voltage - Collector Emitter Breakdown (Max) :
40 V
ECCN Code :
EAR99
Supplier Device Package :
TO-111
Product Type :
BJTs - Bipolar Transistors
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Collector (Ic) (Max) :
5 A
Transistor Application :
SWITCHING
Surface Mount :
No
Reach Compliance Code :
Unknown
Technology :
Si
Qualification Status :
Not Qualified
DC Current Gain-Min (hFE) :
40
Package Shape :
Round
Operating Temperature :
-
Polarity/Channel Type :
NPN
Collector Current-Max (IC) :
5 A
Brand :
Microchip Technology
Power Dissipation Ambient-Max :
30 W
Pbfree Code :
No
Number of Elements :
1
Frequency - Transition :
-
Current - Collector Cutoff (Max) :
-
Power - Max :
30 W
Product Status :
Active
Transistor Polarity :
NPN
Configuration :
Single
Collector-Emitter Voltage-Max :
40 V
Mounting Type :
Stud Mount
Vce Saturation (Max) @ Ib, Ic :
-
Package / Case :
TO-111-4, Stud
Series :
-
Datasheets
2N3747
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N3747 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-, Mounting Type:Stud Mount, Package / Case:TO-111-4, Stud, 2N3747 pinout, 2N3747 datasheet PDF, 2N3747 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N3747 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP - - 1 Elements SILICON NPN TO-111-4, Stud Stud Mount

2N3747 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is -.When VCE saturation is -, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-111 contains the product.Voltage maximal between collector and emitter is set to 40 V.The device has a 40 V maximal voltage - Collector Emitter Breakdown.

2N3747 Features


the DC current gain for this device is -
the vce saturation(Max) is -
the supplier device package of TO-111


2N3747 Applications


There are a lot of Microchip Technology
2N3747 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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