2N3747
- Mfr.Part #
- 2N3747
- Manufacturer
- Microchip Technology
- Package / Case
- TO-111-4, Stud
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 43,740
- In Stock :
- 43,740
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Product Category :
- Bipolar Transistors - BJT
- Terminal Position :
- UPPER
- Manufacturer :
- Microchip
- Subcategory :
- Transistors
- JESD-30 Code :
- O-MUPM-D4
- Package :
- Bulk
- Terminal Form :
- Solder Lug
- Power Dissipation-Max (Abs) :
- 30 W
- Number of Terminals :
- 4
- VCEsat-Max :
- 0.25 V
- Pin Count :
- 4
- Case Connection :
- Isolated
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Voltage - Collector Emitter Breakdown (Max) :
- 40 V
- ECCN Code :
- EAR99
- Supplier Device Package :
- TO-111
- Product Type :
- BJTs - Bipolar Transistors
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Collector (Ic) (Max) :
- 5 A
- Transistor Application :
- SWITCHING
- Surface Mount :
- No
- Reach Compliance Code :
- Unknown
- Technology :
- Si
- Qualification Status :
- Not Qualified
- DC Current Gain-Min (hFE) :
- 40
- Package Shape :
- Round
- Operating Temperature :
- -
- Polarity/Channel Type :
- NPN
- Collector Current-Max (IC) :
- 5 A
- Brand :
- Microchip Technology
- Power Dissipation Ambient-Max :
- 30 W
- Pbfree Code :
- No
- Number of Elements :
- 1
- Frequency - Transition :
- -
- Current - Collector Cutoff (Max) :
- -
- Power - Max :
- 30 W
- Product Status :
- Active
- Transistor Polarity :
- NPN
- Configuration :
- Single
- Collector-Emitter Voltage-Max :
- 40 V
- Mounting Type :
- Stud Mount
- Vce Saturation (Max) @ Ib, Ic :
- -
- Package / Case :
- TO-111-4, Stud
- Series :
- -
- Datasheets
- 2N3747
PNP - - 1 Elements SILICON NPN TO-111-4, Stud Stud Mount
2N3747 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is -.When VCE saturation is -, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-111 contains the product.Voltage maximal between collector and emitter is set to 40 V.The device has a 40 V maximal voltage - Collector Emitter Breakdown.
2N3747 Features
the DC current gain for this device is -
the vce saturation(Max) is -
the supplier device package of TO-111
2N3747 Applications
There are a lot of Microchip Technology
2N3747 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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