2N3737UB
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- Mfr.Part #
- 2N3737UB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 40V 1.5A UB
- Stock
- 4,333
- In Stock ：
- 4,333
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Power Dissipation :
- 500mW
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Turn On Time-Max (ton) :
- 48ns
- Number of Terminations :
- 3
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 1A 1.5V
- Collector Emitter Breakdown Voltage :
- 40V
- Max Power Dissipation :
- 500mW
- Transistor Application :
- SWITCHING
- RoHS Status :
- Non-RoHS Compliant
- Packaging :
- Bulk
- Radiation Hardening :
- No
- Published :
- 2007
- Vce Saturation (Max) @ Ib, Ic :
- 900mV @ 100mA, 1A
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Turn Off Time-Max (toff) :
- 60ns
- Operating Temperature :
- -65°C~200°C TJ
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 1.5A
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Collector Base Voltage (VCBO) :
- 75V
- Pin Count :
- 3
- Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 40V
- Factory Lead Time :
- 12 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 3-SMD, No Lead
- Datasheets
- 2N3737UB
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SMD, No Lead Bulk Surface Mount
2N3737UB Overview
This device has a DC current gain of 20 @ 1A 1.5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 900mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A maximum collector current of 1.5A volts is possible.
2N3737UB Features
the DC current gain for this device is 20 @ 1A 1.5V
the vce saturation(Max) is 900mV @ 100mA, 1A
the emitter base voltage is kept at 5V
2N3737UB Applications
There are a lot of Microsemi Corporation
2N3737UB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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