2N3715
- Mfr.Part #
- 2N3715
- Manufacturer
- Microchip Technology
- Package / Case
- TO-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.001A TO3
- Stock
- 18,400
- In Stock :
- 18,400
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 800mV
- JESD-30 Code :
- O-MBFM-P2
- Terminal Form :
- PIN/PEG
- Mounting Type :
- Through Hole
- Pbfree Code :
- No
- Mount :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Gain Bandwidth Product :
- 4MHz
- Number of Terminations :
- 2
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Published :
- 2016
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Packaging :
- Tube
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 500mA, 5A
- Configuration :
- Single
- Current - Collector (Ic) (Max) :
- 10A
- Transition Frequency :
- 4MHz
- Package / Case :
- TO-3
- Frequency - Transition :
- 4MHz
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Min Operating Temperature :
- -65°C
- Collector Emitter Breakdown Voltage :
- 60V
- ECCN Code :
- EAR99
- Max Operating Temperature :
- 150°C
- Power Dissipation-Max :
- 150W
- Series :
- --
- hFE Min :
- 50
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 1A, 2V
- JESD-609 Code :
- e0
- Pin Count :
- 2
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 12 Weeks
- Case Connection :
- COLLECTOR
- Qualification Status :
- Not Qualified
- Collector Emitter Saturation Voltage :
- 800mV
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Current - Collector Cutoff (Max) :
- --
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- 7V
- Supplier Device Package :
- TO-3
- HTS Code :
- 8541.29.00.95
- Collector Base Voltage (VCBO) :
- 80V
- Max Collector Current :
- 10A
- Polarity :
- NPN
- Power - Max :
- 150W
- DC Current Gain-Min (hFE) :
- 30
- Datasheets
- 2N3715

NPN -65°C ~ 200°C (TJ) -- 1 Elements 2 Terminations TO-3 Tube Through Hole
2N3715 Overview
DC current gain in this device equals 50 @ 1A, 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 800mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 800mV @ 500mA, 5A.An emitter's base voltage can be kept at 7V to gain high efficiency.As a result, the part has a transition frequency of 4MHz.Product comes in TO-3 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 10A volts.
2N3715 Features
the DC current gain for this device is 50 @ 1A, 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 500mA, 5A
the emitter base voltage is kept at 7V
a transition frequency of 4MHz
the supplier device package of TO-3
2N3715 Applications
There are a lot of Central Semiconductor
2N3715 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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