2N3715
- Mfr.Part #
- 2N3715
- Manufacturer
- Microchip Technology
- Package / Case
- TO-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.001A TO3
- Stock
- 18,400
- In Stock :
- 18,400
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Published :
- 2016
- Collector Emitter Voltage (VCEO) :
- 800mV
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 2
- Collector Emitter Breakdown Voltage :
- 60V
- Package / Case :
- TO-3
- Current - Collector (Ic) (Max) :
- 10A
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 150W
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Transition Frequency :
- 4MHz
- RoHS Status :
- RoHS Compliant
- Frequency - Transition :
- 4MHz
- Pbfree Code :
- No
- Min Operating Temperature :
- -65°C
- JESD-609 Code :
- e0
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Current - Collector Cutoff (Max) :
- --
- Max Operating Temperature :
- 150°C
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 1A, 2V
- Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 7V
- hFE Min :
- 50
- Factory Lead Time :
- 12 Weeks
- Collector Emitter Saturation Voltage :
- 800mV
- Series :
- --
- JESD-30 Code :
- O-MBFM-P2
- Supplier Device Package :
- TO-3
- Mounting Type :
- Through Hole
- Power - Max :
- 150W
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 500mA, 5A
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- DC Current Gain-Min (hFE) :
- 30
- Max Collector Current :
- 10A
- Pin Count :
- 2
- Gain Bandwidth Product :
- 4MHz
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Qualification Status :
- Not Qualified
- Terminal Position :
- BOTTOM
- Polarity :
- NPN
- Terminal Form :
- PIN/PEG
- HTS Code :
- 8541.29.00.95
- Collector Base Voltage (VCBO) :
- 80V
- Datasheets
- 2N3715

NPN -65°C ~ 200°C (TJ) -- 1 Elements 2 Terminations TO-3 Tube Through Hole
2N3715 Overview
DC current gain in this device equals 50 @ 1A, 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 800mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 800mV @ 500mA, 5A.An emitter's base voltage can be kept at 7V to gain high efficiency.As a result, the part has a transition frequency of 4MHz.Product comes in TO-3 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 10A volts.
2N3715 Features
the DC current gain for this device is 50 @ 1A, 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 500mA, 5A
the emitter base voltage is kept at 7V
a transition frequency of 4MHz
the supplier device package of TO-3
2N3715 Applications
There are a lot of Central Semiconductor
2N3715 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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