2N3676
- Mfr.Part #
- 2N3676
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- SMALL-SIGNAL BJT
- Stock
- 20,859
- In Stock :
- 20,859
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Brand :
- Microchip Technology / Atmel
- Supplier Device Package :
- TO-5AA
- Current - Collector (Ic) (Max) :
- 3 A
- Series :
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Product Type :
- BJTs - Bipolar Transistors
- Transistor Type :
- NPN
- Manufacturer :
- Microchip
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 100μA, 1mA
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Technology :
- Si
- Voltage - Collector Emitter Breakdown (Max) :
- 90 V
- Transistor Polarity :
- NPN
- Product Status :
- Active
- Package :
- Bulk
- Product Category :
- Bipolar Transistors - BJT
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Subcategory :
- Transistors
- Current - Collector Cutoff (Max) :
- -
- Power - Max :
- 8 W
- Frequency - Transition :
- -
- Datasheets
- 2N3676
NPN -65°C ~ 200°C (TJ) - TO-205AA, TO-5-3 Metal Can Through Hole
2N3676 Overview
This device has a DC current gain of -, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 800mV @ 100μA, 1mA means Ic has reached its maximum value(saturated).Product package TO-5AA comes from the supplier.Collector Emitter Breakdown occurs at 90 VV - Maximum voltage.
2N3676 Features
the DC current gain for this device is -
the vce saturation(Max) is 800mV @ 100μA, 1mA
the supplier device package of TO-5AA
2N3676 Applications
There are a lot of Microchip Technology
2N3676 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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