2N3646
- Mfr.Part #
- 2N3646
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-106-3 Domed
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.2A TO106
- Stock
- 18,121
- In Stock :
- 18,121
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Turn Off Time-Max (toff) :
- 28ns
- Voltage - Collector Emitter Breakdown (Max) :
- 15V
- Turn On Time-Max (ton) :
- 18ns
- JESD-609 Code :
- e0
- Power Dissipation-Max (Abs) :
- 0.2W
- Configuration :
- Single
- Frequency - Transition :
- 350MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 30mA 400mV
- Power - Max :
- 200mW
- Current - Collector (Ic) (Max) :
- 200mA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 30mA, 300mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transition Frequency :
- 350MHz
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- No
- Current - Collector Cutoff (Max) :
- 500nA
- Transistor Type :
- NPN
- Operating Temperature :
- -65°C~150°C TJ
- RoHS Status :
- Non-RoHS Compliant
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- NPN
- HTS Code :
- 8541.21.00.75
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- not_compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- ECCN Code :
- EAR99
- Packaging :
- Bulk
- Package / Case :
- TO-106-3 Domed
- Datasheets
- 2N3646
NPN -65°C~150°C TJ 500nA 1 Elements SILICON NPN TO-106-3 Domed Bulk Through Hole
2N3646 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 30mA 400mV.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 30mA, 300mA.A transition frequency of 350MHz is present in the part.A 15V maximal voltage - Collector Emitter Breakdown is present in the device.
2N3646 Features
the DC current gain for this device is 30 @ 30mA 400mV
the vce saturation(Max) is 500mV @ 30mA, 300mA
a transition frequency of 350MHz
2N3646 Applications
There are a lot of Central Semiconductor Corp
2N3646 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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