2N3646

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Mfr.Part #
2N3646
Manufacturer
Central Semiconductor
Package / Case
TO-106-3 Domed
Datasheet
Download
Description
TRANS NPN 15V 0.2A TO106
Stock
18,121
In Stock :
18,121

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Manufacturer :
Central Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Turn Off Time-Max (toff) :
28ns
Voltage - Collector Emitter Breakdown (Max) :
15V
Turn On Time-Max (ton) :
18ns
JESD-609 Code :
e0
Power Dissipation-Max (Abs) :
0.2W
Configuration :
Single
Frequency - Transition :
350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 30mA 400mV
Power - Max :
200mW
Current - Collector (Ic) (Max) :
200mA
Vce Saturation (Max) @ Ib, Ic :
500mV @ 30mA, 300mA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transition Frequency :
350MHz
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pbfree Code :
No
Current - Collector Cutoff (Max) :
500nA
Transistor Type :
NPN
Operating Temperature :
-65°C~150°C TJ
RoHS Status :
Non-RoHS Compliant
Surface Mount :
No
Mounting Type :
Through Hole
Polarity/Channel Type :
NPN
HTS Code :
8541.21.00.75
Number of Elements :
1
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Reach Compliance Code :
not_compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
Terminal Finish :
Tin/Lead (Sn/Pb)
ECCN Code :
EAR99
Packaging :
Bulk
Package / Case :
TO-106-3 Domed
Datasheets
2N3646
Introducing Transistors - Bipolar (BJT) - Single Central Semiconductor 2N3646 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-106-3 Domed, 2N3646 pinout, 2N3646 datasheet PDF, 2N3646 amp .Beyond Transistors - Bipolar (BJT) - Single Central Semiconductor 2N3646 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -65°C~150°C TJ 500nA 1 Elements SILICON NPN TO-106-3 Domed Bulk Through Hole

2N3646 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 30mA 400mV.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 30mA, 300mA.A transition frequency of 350MHz is present in the part.A 15V maximal voltage - Collector Emitter Breakdown is present in the device.

2N3646 Features


the DC current gain for this device is 30 @ 30mA 400mV
the vce saturation(Max) is 500mV @ 30mA, 300mA
a transition frequency of 350MHz


2N3646 Applications


There are a lot of Central Semiconductor Corp
2N3646 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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