2N3637UB/TR

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Mfr.Part #
2N3637UB/TR
Manufacturer
Microchip Technology
Package / Case
3-SMD, No Lead
Datasheet
Download
Description
TRANS PNP 175V 1A UB
Stock
4,233
In Stock :
4,233

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Voltage - Collector Emitter Breakdown (Max) :
175 V
Mounting Style :
SMD/SMT
Minimum Operating Temperature :
- 65 C
Current - Collector (Ic) (Max) :
1 A
Series :
-
Product Type :
BJTs - Bipolar Transistors
Current - Collector Cutoff (Max) :
10μA
Product Category :
Bipolar Transistors - BJT
Mounting Type :
Surface Mount
Frequency - Transition :
-
Brand :
Microchip Technology
Package :
Tape and Reel (TR)
Transistor Polarity :
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 50mA, 10V
Packaging :
Reel
Vce Saturation (Max) @ Ib, Ic :
600mV @ 5mA, 50mA
Operating Temperature :
-65°C ~ 200°C (TJ)
Manufacturer :
Microchip
Transistor Type :
PNP
Product Status :
Active
Power - Max :
1.5 W
Package / Case :
3-SMD, No Lead
RoHS :
N
Maximum Operating Temperature :
+ 200 C
Configuration :
Single
Subcategory :
Transistors
Supplier Device Package :
UB
Technology :
Si
Datasheets
2N3637UB/TR
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N3637UB/TR from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-65°C ~ 200°C (TJ), Package / Case:3-SMD, No Lead, 2N3637UB/TR pinout, 2N3637UB/TR datasheet PDF, 2N3637UB/TR amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N3637UB/TR ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology 2N3637UB/TR


PNP -65°C ~ 200°C (TJ) 10μA 3-SMD, No Lead Reel Surface Mount

2N3637UB/TR Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 50mA, 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 50mA.This product comes in a UB device package from the supplier.Device displays Collector Emitter Breakdown (175 V maximal voltage).

2N3637UB/TR Features


the DC current gain for this device is 100 @ 50mA, 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the supplier device package of UB


2N3637UB/TR Applications


There are a lot of Microchip Technology
2N3637UB/TR applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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