2N3637UB

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Package / Case :

3-SMD, No Lead

Pbfree Code :

No

Power Dissipation :

1W

Published :

2007

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 50mA

Packaging :

Tray

RoHS Status :

Non-RoHS Compliant

Collector Emitter Voltage (VCEO) :

140V

Emitter Base Voltage (VEBO) :

5V

Polarity/Channel Type :

PNP

ECCN Code :

EAR99

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.29.00.95

Collector Emitter Breakdown Voltage :

175V

Collector Base Voltage (VCBO) :

175V

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 50mA 10V

Max Collector Current :

1A

Radiation Hardening :

No

Terminal Finish :

TIN LEAD

JESD-609 Code :

e0

Transistor Element Material :

SILICON

Pin Count :

3

Power - Max :

1.5W

Current - Collector Cutoff (Max) :

10μA

Operating Temperature :

-65°C~200°C TJ

Transistor Type :

PNP

Mount :

Surface Mount

Number of Terminations :

3

Configuration :

Single

Factory Lead Time :

12 Weeks

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Max Power Dissipation :

1.5W

Number of Pins :

3

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount