2N3637L

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Base Voltage (VCBO) :

175V

Transistor Type :

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 50mA 10V

Package / Case :

TO-205AA, TO-5-3 Metal Can

Transistor Element Material :

SILICON

Published :

2010

HTS Code :

8541.29.00.95

Max Power Dissipation :

1W

Collector Emitter Voltage (VCEO) :

140V

Power - Max :

1W

JESD-609 Code :

e0

Terminal Position :

BOTTOM

Number of Terminations :

3

Polarity/Channel Type :

PNP

Mounting Type :

Through Hole

Factory Lead Time :

12 Weeks

Packaging :

Bulk

Max Collector Current :

1A

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

No

Radiation Hardening :

No

Configuration :

Single

Terminal Finish :

TIN LEAD

Terminal Form :

Wire

Transistor Application :

AMPLIFIER

Number of Pins :

3

Mount :

Through Hole

Current - Collector Cutoff (Max) :

10μA

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 50mA

Number of Elements :

1

Operating Temperature :

-65°C~200°C TJ

ECCN Code :

EAR99