2N3637
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- Mfr.Part #
- 2N3637
- Manufacturer
- Microchip Technology
- Package / Case
- TO-39
- Datasheet
- Download
- Description
- NPN POWER SILICON TRANSISTORS
- Stock
- 21,831
- In Stock ：
- 21,831
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 175V
- Max Collector Current :
- 1A
- RoHS Status :
- Non-RoHS Compliant
- Packaging :
- Bulk
- Polarity :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Factory Lead Time :
- 12 Weeks
- Package / Case :
- TO-39
- Min Operating Temperature :
- -65°C
- Number of Elements :
- 1
- Mount :
- Through Hole
- Number of Pins :
- 3
- Published :
- 2010
- Power Dissipation :
- 1W
- Max Power Dissipation :
- 1W
- Max Operating Temperature :
- 200°C
- Collector Emitter Voltage (VCEO) :
- 175V
- Datasheets
- 2N3637
1 Elements TO-39 Bulk
2N3637 Overview
An emitter's base voltage can be kept at 5V to gain high efficiency.In extreme cases, the collector current can be as low as 1A volts.
2N3637 Features
the emitter base voltage is kept at 5V
2N3637 Applications
There are a lot of Microsemi Corporation
2N3637 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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|---|---|---|---|
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