2N3636UB

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Operating Temperature :

-65°C~200°C TJ

HTS Code :

8541.29.00.95

Collector Emitter Voltage (VCEO) :

175V

Mounting Type :

Surface Mount

Terminal Position :

Dual

Polarity/Channel Type :

PNP

Mount :

Surface Mount

Max Power Dissipation :

1W

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 50mA 10V

ECCN Code :

EAR99

RoHS Status :

Non-RoHS Compliant

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 50mA

Collector Base Voltage (VCBO) :

175V

Published :

2007

Power - Max :

1.5W

Configuration :

Single

Packaging :

Bulk

Number of Terminations :

3

Max Collector Current :

1A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

10μA

Package / Case :

3-SMD, No Lead

Number of Pins :

3

Transistor Type :

PNP

Pin Count :

3