2N3636UB

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Mfr.Part #
2N3636UB
Manufacturer
Microchip Technology
Package / Case
3-SMD, No Lead
Datasheet
Download
Description
TRANS PNP 175V 1A 3SMD
Stock
49,247
In Stock :
49,247

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 50mA 10V
ECCN Code :
EAR99
Factory Lead Time :
12 Weeks
Published :
2007
Max Collector Current :
1A
Transistor Application :
SWITCHING
Configuration :
Single
Number of Terminations :
3
Collector Emitter Voltage (VCEO) :
175V
Mount :
Surface Mount
Transistor Element Material :
SILICON
Mounting Type :
Surface Mount
Number of Elements :
1
Package / Case :
3-SMD, No Lead
Terminal Position :
Dual
Collector Base Voltage (VCBO) :
175V
HTS Code :
8541.29.00.95
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
PNP
Number of Pins :
3
Pin Count :
3
Radiation Hardening :
No
Operating Temperature :
-65°C~200°C TJ
Power - Max :
1.5W
RoHS Status :
Non-RoHS Compliant
Vce Saturation (Max) @ Ib, Ic :
600mV @ 5mA, 50mA
Current - Collector Cutoff (Max) :
10μA
Polarity/Channel Type :
PNP
Max Power Dissipation :
1W
Packaging :
Bulk
Datasheets
2N3636UB
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N3636UB from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Surface Mount, Package / Case:3-SMD, No Lead, Number of Pins:3, Operating Temperature:-65°C~200°C TJ, 2N3636UB pinout, 2N3636UB datasheet PDF, 2N3636UB amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N3636UB ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP 3-SMD, No Lead Bulk Surface Mount

2N3636UB Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 50 @ 50mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 50mA.During maximum operation, collector current can be as low as 1A volts.

2N3636UB Features


the DC current gain for this device is 50 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA


2N3636UB Applications


There are a lot of Microsemi Corporation
2N3636UB applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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