2N3636L

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Mfr.Part #
2N3636L
Manufacturer
Microchip Technology
Package / Case
TO-205AA, TO-5-3 Metal Can
Datasheet
Download
Description
TRANS PNP 175V 1A TO5
Stock
19,387
In Stock :
19,387

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
RoHS Status :
Non-RoHS Compliant
Collector Emitter Voltage (VCEO) :
175V
Pbfree Code :
No
Packaging :
Bulk
Mount :
Through Hole
Max Power Dissipation :
1W
Vce Saturation (Max) @ Ib, Ic :
600mV @ 5mA, 50mA
Operating Temperature :
-65°C~200°C TJ
Transistor Application :
AMPLIFIER
HTS Code :
8541.29.00.95
Factory Lead Time :
12 Weeks
Power - Max :
1W
JESD-609 Code :
e0
Package / Case :
TO-205AA, TO-5-3 Metal Can
Terminal Position :
BOTTOM
Max Collector Current :
1A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
TIN LEAD
Mounting Type :
Through Hole
Terminal Form :
Wire
Transistor Type :
PNP
Radiation Hardening :
No
Collector Base Voltage (VCBO) :
175V
Number of Elements :
1
Configuration :
Single
Number of Pins :
3
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Number of Terminations :
3
Current - Collector Cutoff (Max) :
10μA
Published :
2007
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 50mA 10V
Polarity/Channel Type :
PNP
Transistor Element Material :
SILICON
ECCN Code :
EAR99
Datasheets
2N3636L
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N3636L from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~200°C TJ, Package / Case:TO-205AA, TO-5-3 Metal Can, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, 2N3636L pinout, 2N3636L datasheet PDF, 2N3636L amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N3636L ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology 2N3636L


PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-205AA, TO-5-3 Metal Can Bulk Through Hole

2N3636L Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 50mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 50mA.Collector current can be as low as 1A volts at its maximum.

2N3636L Features


the DC current gain for this device is 50 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA


2N3636L Applications


There are a lot of Microsemi Corporation
2N3636L applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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