2N2222AUB
- Mfr.Part #
- 2N2222AUB
- Manufacturer
- TT Electronics
- Package / Case
- 3-LCC
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A SMD
- Stock
- 347
- In Stock :
- 347
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- Manufacturer :
- TT Electronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e0
- ECCN Code :
- EAR99
- Factory Lead Time :
- 25 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 15mA, 500mA
- Packaging :
- Bulk
- Package / Case :
- 3-LCC
- RoHS Status :
- Non-RoHS Compliant
- Collector Base Voltage (VCBO) :
- 75V
- Transition Frequency :
- 250MHz
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Type :
- NPN
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 1mA 10V
- Max Collector Current :
- 800mA
- Mount :
- Surface Mount
- Terminal Form :
- NO LEAD
- Qualification Status :
- Not Qualified
- Collector Emitter Saturation Voltage :
- 1V
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Pbfree Code :
- No
- Manufacturer Package Identifier :
- 2N2222AUB
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Power Dissipation :
- 300mW
- hFE Min :
- 30
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Height :
- 1.42mm
- Current - Collector Cutoff (Max) :
- 50nA
- Published :
- 1997
- Power Dissipation :
- 300mW
- Operating Temperature :
- -65°C~200°C TJ
- Collector Emitter Breakdown Voltage :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Length :
- 3.175mm
- Max Junction Temperature (Tj) :
- 200°C
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 6V
- Width :
- 2.667mm
- Datasheets
- 2N2222AUB
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NPN -65°C~200°C TJ 50nA 1 Elements 3 Terminations SILICON NPN 3-LCC Bulk Surface Mount
2N2222AUB Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 75 @ 1mA 10V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 15mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 250MHz.A maximum collector current of 800mA volts can be achieved.
2N2222AUB Features
the DC current gain for this device is 75 @ 1mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 15mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
2N2222AUB Applications
There are a lot of TT Electronics/Optek Technology
2N2222AUB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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