2N2219A
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- Mfr.Part #
- 2N2219A
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.8A TO39
- Stock
- 25,194
- In Stock ：
- 25,194
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- Max Collector Current :
- 800mA
- Supplier Device Package :
- TO-39 (TO-205AD)
- Polarity :
- NPN
- Power - Max :
- 800mW
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Max Operating Temperature :
- 200°C
- Number of Elements :
- 1
- Published :
- 2007
- Collector Base Voltage (VCBO) :
- 75V
- Collector Emitter Breakdown Voltage :
- 50V
- Power Dissipation :
- 800mW
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Collector Emitter Voltage (VCEO) :
- 50V
- Min Operating Temperature :
- -55°C
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Emitter Base Voltage (VEBO) :
- 6V
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 8 Weeks
- Max Power Dissipation :
- 800mW
- Number of Pins :
- 3
- Current - Collector (Ic) (Max) :
- 800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Transistor Type :
- NPN
- Operating Temperature :
- -55°C~200°C TJ
- Current - Collector Cutoff (Max) :
- 10nA
- Datasheets
- 2N2219A
NPN -55°C~200°C TJ 10nA 1 Elements TO-205AD, TO-39-3 Metal Can Bulk Through Hole
2N2219A Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Product comes in the supplier's device package TO-39 (TO-205AD).There is a 50V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
2N2219A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of TO-39 (TO-205AD)
2N2219A Applications
There are a lot of Microsemi Corporation
2N2219A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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