2N2219A

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Min Operating Temperature :

-55°C

Emitter Base Voltage (VEBO) :

6V

Voltage - Collector Emitter Breakdown (Max) :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Packaging :

Bulk

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA

Max Collector Current :

800mA

Radiation Hardening :

No

Number of Pins :

3

Max Power Dissipation :

800mW

Collector Base Voltage (VCBO) :

75V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

50V

Max Operating Temperature :

200°C

Polarity :

NPN

Current - Collector Cutoff (Max) :

10nA

Supplier Device Package :

TO-39 (TO-205AD)

Current - Collector (Ic) (Max) :

800mA

Factory Lead Time :

8 Weeks

Mounting Type :

Through Hole

Power - Max :

800mW

Published :

2007

RoHS Status :

Non-RoHS Compliant

Power Dissipation :

800mW

Collector Emitter Breakdown Voltage :

50V

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Mount :

Through Hole

Operating Temperature :

-55°C~200°C TJ

Package / Case :

TO-205AD, TO-39-3 Metal Can

Number of Elements :

1

Transistor Type :

NPN