2N2218AL
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- Mfr.Part #
- 2N2218AL
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO5
- Stock
- 37,144
- In Stock ：
- 37,144
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 75V
- Case Connection :
- COLLECTOR
- HTS Code :
- 8541.21.00.95
- Number of Pins :
- 3
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Factory Lead Time :
- 12 Weeks
- Max Collector Current :
- 800mA
- Mount :
- Through Hole
- Terminal Form :
- Wire
- Current - Collector Cutoff (Max) :
- 10nA
- Collector Emitter Voltage (VCEO) :
- 50V
- Terminal Position :
- BOTTOM
- Published :
- 2007
- Current - Collector (Ic) (Max) :
- 800mA
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- JESD-609 Code :
- e0
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- Operating Temperature :
- -55°C~200°C TJ
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Pbfree Code :
- No
- Number of Terminations :
- 3
- Max Power Dissipation :
- 800mW
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Terminal Finish :
- TIN LEAD
- Datasheets
- 2N2218AL
NPN -55°C~200°C TJ 10nA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
2N2218AL Overview
In this device, the DC current gain is 40 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
2N2218AL Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
2N2218AL Applications
There are a lot of Microsemi Corporation
2N2218AL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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