2N2222AUB
- Mfr.Part #
- 2N2222AUB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-LCC
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A 3SMD
- Stock
- 14,377
- In Stock :
- 14,377
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 50V
- Height :
- 1.42mm
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Terminal Position :
- Dual
- Transition Frequency :
- 250MHz
- Collector Emitter Saturation Voltage :
- 1V
- Power Dissipation :
- 300mW
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 15mA, 500mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e0
- Max Collector Current :
- 800mA
- hFE Min :
- 30
- Number of Elements :
- 1
- Max Junction Temperature (Tj) :
- 200°C
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Width :
- 2.667mm
- ECCN Code :
- EAR99
- Manufacturer Package Identifier :
- 2N2222AUB
- Qualification Status :
- Not Qualified
- Collector Base Voltage (VCBO) :
- 75V
- Number of Terminations :
- 3
- Package / Case :
- 3-LCC
- Published :
- 1997
- RoHS Status :
- Non-RoHS Compliant
- Terminal Form :
- NO LEAD
- Pbfree Code :
- No
- Factory Lead Time :
- 25 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 3.175mm
- Max Power Dissipation :
- 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 1mA 10V
- Operating Temperature :
- -65°C~200°C TJ
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 50nA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Emitter Base Voltage (VEBO) :
- 6V
- Packaging :
- Bulk
- Collector Emitter Voltage (VCEO) :
- 50V
- Datasheets
- 2N2222AUB

NPN -65°C~200°C TJ 50nA 1 Elements 3 Terminations SILICON NPN 3-LCC Bulk Surface Mount
2N2222AUB Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 75 @ 1mA 10V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 15mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 250MHz.A maximum collector current of 800mA volts can be achieved.
2N2222AUB Features
the DC current gain for this device is 75 @ 1mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 15mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
2N2222AUB Applications
There are a lot of TT Electronics/Optek Technology
2N2222AUB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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