2N2222AP
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- Mfr.Part #
- 2N2222AP
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- SMALL-SIGNAL BJT
- Stock
- 47,245
- In Stock ：
- 47,245
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- JESD-609 Code :
- e3
- JESD-30 Code :
- O-MBCY-W3
- Surface Mount :
- No
- Power Dissipation-Max (Abs) :
- 0.5W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Operating Temperature :
- -65°C~200°C TJ
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Time-Max (ton) :
- 35ns
- Frequency - Transition :
- 300MHz
- Factory Lead Time :
- 20 Weeks
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Turn Off Time-Max (toff) :
- 285ns
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Power - Max :
- 500mW
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Packaging :
- Bulk
- Terminal Position :
- BOTTOM
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Configuration :
- Single
- Terminal Form :
- Wire
- Transition Frequency :
- 300MHz
- Current - Collector (Ic) (Max) :
- 800mA
- Number of Elements :
- 1
- Datasheets
- 2N2222AP
NPN -65°C~200°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole
2N2222A PBFREE Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 300MHz in the part.Single BJT transistor shows a 40V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2N2222A PBFREE Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
a transition frequency of 300MHz
2N2222A PBFREE Applications
There are a lot of Central Semiconductor Corp
2N2222A PBFREE applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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