2N2222AL
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- Mfr.Part #
- 2N2222AL
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO18
- Stock
- 16,684
- In Stock ：
- 16,684
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Power - Max :
- 500mW
- Number of Pins :
- 3
- Mount :
- Through Hole
- Pbfree Code :
- No
- Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- JESD-609 Code :
- e0
- RoHS Status :
- Non-RoHS Compliant
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- HTS Code :
- 8541.21.00.95
- Current - Collector Cutoff (Max) :
- 50nA
- Max Power Dissipation :
- 500mW
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Terminal Position :
- BOTTOM
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Published :
- 2007
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Operating Temperature :
- -65°C~200°C TJ
- Collector Base Voltage (VCBO) :
- 75V
- Packaging :
- Bulk
- Factory Lead Time :
- 8 Weeks
- Max Collector Current :
- 800mA
- Polarity/Channel Type :
- NPN
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 1V
- Terminal Form :
- Wire
- Terminal Finish :
- TIN LEAD
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Datasheets
- 2N2222AL
NPN -65°C~200°C TJ 50nA 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole
2N2222AL Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.When collector current reaches its maximum, it can reach 800mA volts.
2N2222AL Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
2N2222AL Applications
There are a lot of Microsemi Corporation
2N2222AL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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