2N2222AE4

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Mfr.Part #
2N2222AE4
Manufacturer
Microchip Technology
Package / Case
TO-206AA, TO-18-3 Metal Can
Datasheet
Download
Description
TRANS NPN 50V 0.8A TO18
Stock
30,594
In Stock :
30,594

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Max Power Dissipation :
500mW
Voltage - Collector Emitter Breakdown (Max) :
50V
Current - Collector (Ic) (Max) :
800mA
Collector Emitter Voltage (VCEO) :
50V
Mount :
Through Hole
Max Collector Current :
800mA
Mounting Type :
Through Hole
Factory Lead Time :
8 Weeks
Operating Temperature :
-65°C~200°C TJ
Package / Case :
TO-206AA, TO-18-3 Metal Can
Power - Max :
500mW
Max Operating Temperature :
200°C
RoHS Status :
Non-RoHS Compliant
Vce Saturation (Max) @ Ib, Ic :
1V @ 50mA, 500mA
Radiation Hardening :
No
Current - Collector Cutoff (Max) :
10μA ICBO
Collector Base Voltage (VCBO) :
75V
Min Operating Temperature :
-65°C
Packaging :
Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 10V
Number of Pins :
3
Supplier Device Package :
TO-18
Transistor Type :
NPN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
2N2222AE4
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology 2N2222AE4 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-65°C~200°C TJ, Package / Case:TO-206AA, TO-18-3 Metal Can, Number of Pins:3, 2N2222AE4 pinout, 2N2222AE4 datasheet PDF, 2N2222AE4 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology 2N2222AE4 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology 2N2222AE4


NPN -65°C~200°C TJ 10μA ICBO TO-206AA, TO-18-3 Metal Can Bulk Through Hole

2N2222AE4 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.When VCE saturation is 1V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-18 contains the product.The device has a 50V maximal voltage - Collector Emitter Breakdown.A maximum collector current of 800mA volts can be achieved.

2N2222AE4 Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of TO-18


2N2222AE4 Applications


There are a lot of Microsemi Corporation
2N2222AE4 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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