2N2219AL
- Mfr.Part #
- 2N2219AL
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO39
- Stock
- 25,797
- In Stock :
- 25,797
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 75V
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 22 Weeks
- Radiation Hardening :
- No
- Pbfree Code :
- No
- Transistor Type :
- NPN
- Power Dissipation :
- 800mW
- Operating Temperature :
- -55°C~200°C TJ
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Collector Emitter Breakdown Voltage :
- 50V
- Max Power Dissipation :
- 800mW
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- RoHS Status :
- Non-RoHS Compliant
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Max Collector Current :
- 800mA
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Published :
- 2007
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Current - Collector Cutoff (Max) :
- 10nA
- Mount :
- Through Hole
- JESD-609 Code :
- e0
- JEDEC-95 Code :
- TO-5
- Terminal Form :
- Wire
- Terminal Position :
- BOTTOM
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 50V
- Configuration :
- Single
- Datasheets
- 2N2219AL
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NPN -55°C~200°C TJ 10nA 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
2N2219AL Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
2N2219AL Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
2N2219AL Applications
There are a lot of Microsemi Corporation
2N2219AL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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