2N2219AE4
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- Mfr.Part #
- 2N2219AE4
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO39
- Stock
- 11,861
- In Stock ：
- 11,861
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 800mA
- Packaging :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Supplier Device Package :
- TO-39 (TO-205AD)
- Power - Max :
- 800mW
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Operating Temperature :
- -55°C~200°C TJ
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Current - Collector Cutoff (Max) :
- 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Factory Lead Time :
- 8 Weeks
- Datasheets
- 2N2219AE4
NPN -55°C~200°C TJ 10nA TO-205AD, TO-39-3 Metal Can Bulk Through Hole
2N2219AE4 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.The product comes in the supplier device package of TO-39 (TO-205AD).A 50V maximal voltage - Collector Emitter Breakdown is present in the device.
2N2219AE4 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of TO-39 (TO-205AD)
2N2219AE4 Applications
There are a lot of Microsemi Corporation
2N2219AE4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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