2DD2679-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Gain Bandwidth Product :

240MHz

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

30V

Max Collector Current :

2A

Termination :

SMD/SMT

Collector Emitter Saturation Voltage :

370mV

Package / Case :

TO-243AA

Polarity/Channel Type :

NPN

RoHS Status :

ROHS3 Compliant

Transistor Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Frequency :

240MHz

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Power Dissipation :

2W

Collector Emitter Breakdown Voltage :

30V

Number of Elements :

1

Factory Lead Time :

13 Weeks

REACH SVHC :

No SVHC

Transition Frequency :

240MHz

hFE Min :

270

Length :

4.5mm

Transistor Application :

SWITCHING

Weight :

51.993025mg

Number of Terminations :

3

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

30V

Emitter Base Voltage (VEBO) :

6V

JESD-609 Code :

e3

Mount :

Surface Mount

Current - Collector Cutoff (Max) :

100nA ICBO

Number of Pins :

3

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

Width :

2.5mm

Case Connection :

COLLECTOR

Pbfree Code :

yes

Published :

2008

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

370mV @ 75mA, 1.5A

Max Power Dissipation :

2W

Height :

1.5mm

Radiation Hardening :

No

Terminal Form :

Flat

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 200mA 2V

Element Configuration :

Single