2DD2656-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Peak Reflow Temperature (Cel) :

260

Power - Max :

300mW

Collector Emitter Voltage (VCEO) :

30V

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Breakdown Voltage :

30V

Base Part Number :

2DD2656

Gain Bandwidth Product :

270MHz

Transition Frequency :

270MHz

Radiation Hardening :

No

Published :

2008

Pbfree Code :

yes

Emitter Base Voltage (VEBO) :

6V

Element Configuration :

Single

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

350mV @ 25mA, 500mA

Current - Collector Cutoff (Max) :

100nA ICBO

Max Breakdown Voltage :

30V

Number of Pins :

3

Termination :

SMD/SMT

Mount :

Surface Mount

Length :

2.15mm

Power Dissipation :

500mW

Terminal Form :

Gull wing

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Saturation Voltage :

350mV

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

Package / Case :

SC-70, SOT-323

Transistor Element Material :

SILICON

Max Power Dissipation :

300mW

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Max Collector Current :

1A

Frequency :

270MHz

REACH SVHC :

No SVHC

Terminal Position :

Dual

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

hFE Min :

270

Factory Lead Time :

12 Weeks

Width :

1.3mm

Height :

1mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Mounting Type :

Surface Mount

Collector Base Voltage (VCBO) :

30V

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 100mA 2V

Weight :

6.010099mg

JESD-609 Code :

e3