2DD2678-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

12V

Number of Terminations :

4

Collector Base Voltage (VCBO) :

15V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Max Breakdown Voltage :

12V

REACH SVHC :

No SVHC

Mount :

Surface Mount

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 500mA 2V

Base Part Number :

2DD2678

Weight :

51.993025mg

Radiation Hardening :

No

Max Power Dissipation :

900mW

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-243AA

Number of Elements :

1

Width :

2.5mm

Terminal Finish :

Matte Tin (Sn)

Gain Bandwidth Product :

170MHz

Power Dissipation :

2W

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Transistor Type :

NPN

Number of Pins :

4

Pin Count :

4

Polarity/Channel Type :

NPN

Case Connection :

COLLECTOR

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 30mA, 1.5A

Emitter Base Voltage (VEBO) :

6V

Max Collector Current :

3A

Length :

4.5mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Emitter Voltage (VCEO) :

12V

Mounting Type :

Surface Mount

Terminal Form :

Flat

Factory Lead Time :

13 Weeks

Frequency :

170MHz

Transition Frequency :

170MHz

Peak Reflow Temperature (Cel) :

260

Collector Emitter Saturation Voltage :

250mV

Height :

1.5mm

Element Configuration :

Single

Published :

2008

Power - Max :

900mW