2DD2678-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

ROHS3 Compliant

Published :

2008

Collector Emitter Saturation Voltage :

250mV

Weight :

51.993025mg

Terminal Position :

Dual

Height :

1.5mm

Number of Terminations :

4

Case Connection :

COLLECTOR

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Base Part Number :

2DD2678

REACH SVHC :

No SVHC

Max Breakdown Voltage :

12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

6V

Transistor Element Material :

SILICON

Power - Max :

900mW

Vce Saturation (Max) @ Ib, Ic :

250mV @ 30mA, 1.5A

Peak Reflow Temperature (Cel) :

260

Length :

4.5mm

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

4

Element Configuration :

Single

Factory Lead Time :

13 Weeks

Frequency :

170MHz

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Max Collector Current :

3A

Terminal Form :

Flat

Pbfree Code :

yes

Collector Base Voltage (VCBO) :

15V

Polarity/Channel Type :

NPN

Gain Bandwidth Product :

170MHz

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 500mA 2V

Collector Emitter Voltage (VCEO) :

12V

Pin Count :

4

Current - Collector Cutoff (Max) :

100nA ICBO

Max Power Dissipation :

900mW

Transition Frequency :

170MHz

Package / Case :

TO-243AA

Power Dissipation :

2W

Mounting Type :

Surface Mount

Number of Elements :

1

Mount :

Surface Mount

Width :

2.5mm

Collector Emitter Breakdown Voltage :

12V

Transistor Type :

NPN

Packaging :

Tape and Reel (TR)