2DD2678-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Form :

Flat

Max Collector Current :

3A

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Weight :

51.993025mg

Length :

4.5mm

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

900mW

Polarity/Channel Type :

NPN

JESD-609 Code :

e3

Mount :

Surface Mount

Pin Count :

4

Transistor Application :

SWITCHING

Number of Terminations :

4

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Power Dissipation :

2W

Transistor Type :

NPN

Collector Emitter Voltage (VCEO) :

12V

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 500mA 2V

Current - Collector Cutoff (Max) :

100nA ICBO

Pbfree Code :

yes

Gain Bandwidth Product :

170MHz

Peak Reflow Temperature (Cel) :

260

Case Connection :

COLLECTOR

Power - Max :

900mW

Radiation Hardening :

No

Package / Case :

TO-243AA

Factory Lead Time :

13 Weeks

ECCN Code :

EAR99

Transition Frequency :

170MHz

REACH SVHC :

No SVHC

Collector Base Voltage (VCBO) :

15V

Emitter Base Voltage (VEBO) :

6V

Number of Pins :

4

Collector Emitter Saturation Voltage :

250mV

Height :

1.5mm

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

12V

Width :

2.5mm

Terminal Finish :

Matte Tin (Sn)

Max Breakdown Voltage :

12V

Base Part Number :

2DD2678

Published :

2008

Number of Elements :

1

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

250mV @ 30mA, 1.5A

Frequency :

170MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)