2DD2678-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Terminations :

4

Transistor Type :

NPN

Collector Base Voltage (VCBO) :

15V

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

6V

Collector Emitter Breakdown Voltage :

12V

Height :

1.5mm

Power - Max :

900mW

Collector Emitter Saturation Voltage :

250mV

Polarity/Channel Type :

NPN

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Number of Pins :

4

Base Part Number :

2DD2678

Transition Frequency :

170MHz

Terminal Form :

Flat

Width :

2.5mm

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

12V

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Max Power Dissipation :

900mW

Mount :

Surface Mount

Published :

2008

Max Breakdown Voltage :

12V

Gain Bandwidth Product :

170MHz

Vce Saturation (Max) @ Ib, Ic :

250mV @ 30mA, 1.5A

Mounting Type :

Surface Mount

Package / Case :

TO-243AA

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 500mA 2V

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Weight :

51.993025mg

Frequency :

170MHz

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

JESD-609 Code :

e3

Pin Count :

4

Max Collector Current :

3A

Length :

4.5mm

Current - Collector Cutoff (Max) :

100nA ICBO

Factory Lead Time :

13 Weeks

Power Dissipation :

2W

Case Connection :

COLLECTOR

Transistor Element Material :

SILICON