2DD2661-13
- Mfr.Part #
- 2DD2661-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 12V 2A SOT89-3
- Stock
- 9,394
- In Stock :
- 9,394
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Case Connection :
- COLLECTOR
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Length :
- 4.5mm
- Operating Temperature :
- -55°C~150°C TJ
- Gain Bandwidth Product :
- 170MHz
- Weight :
- 51.993025mg
- Factory Lead Time :
- 15 Weeks
- Base Part Number :
- 2DD2661
- JESD-609 Code :
- e3
- Manufacturer Package Identifier :
- 2DD2661-13
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Number of Pins :
- 4
- Radiation Hardening :
- No
- JESD-30 Code :
- R-PSSO-F3
- Collector Base Voltage (VCBO) :
- 15V
- Collector Emitter Breakdown Voltage :
- 12V
- Terminal Finish :
- Matte Tin (Sn)
- Published :
- 2008
- Emitter Base Voltage (VEBO) :
- 6V
- Pbfree Code :
- yes
- Terminal Form :
- Flat
- Transition Frequency :
- 170MHz
- Power Dissipation :
- 2W
- Vce Saturation (Max) @ Ib, Ic :
- 180mV @ 50mA, 1A
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Width :
- 2.5mm
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 12V
- Collector Emitter Saturation Voltage :
- 180mV
- Height :
- 1.5mm
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Max Collector Current :
- 2A
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 12V
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-243AA
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 900mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Frequency :
- 170MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power - Max :
- 900mW
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- 2DD2661-13

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2DD2661-13 Overview
This device has a DC current gain of 270 @ 200mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 180mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 170MHz.As a result, it can handle voltages as low as 12V volts.The maximum collector current is 2A volts.
2DD2661-13 Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 180mV @ 50mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 170MHz
2DD2661-13 Applications
There are a lot of Diodes Incorporated
2DD2661-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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