2DD2661-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Tape and Reel (TR)

Weight :

51.993025mg

JESD-609 Code :

e3

Pbfree Code :

yes

JESD-30 Code :

R-PSSO-F3

Collector Emitter Breakdown Voltage :

12V

Collector Base Voltage (VCBO) :

15V

Number of Pins :

4

Power - Max :

900mW

Manufacturer Package Identifier :

2DD2661-13

RoHS Status :

ROHS3 Compliant

Gain Bandwidth Product :

170MHz

Length :

4.5mm

Terminal Form :

Flat

Polarity/Channel Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Max Collector Current :

2A

Number of Terminations :

3

Current - Collector Cutoff (Max) :

100nA ICBO

REACH SVHC :

No SVHC

Radiation Hardening :

No

Package / Case :

TO-243AA

Pin Count :

3

Vce Saturation (Max) @ Ib, Ic :

180mV @ 50mA, 1A

Emitter Base Voltage (VEBO) :

6V

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

180mV

Collector Emitter Voltage (VCEO) :

12V

Mounting Type :

Surface Mount

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Max Breakdown Voltage :

12V

Operating Temperature :

-55°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 200mA 2V

Width :

2.5mm

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Base Part Number :

2DD2661

Height :

1.5mm

Published :

2008

Transistor Element Material :

SILICON

Transistor Type :

NPN

Transition Frequency :

170MHz

Max Power Dissipation :

900mW

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

15 Weeks

Case Connection :

COLLECTOR

Power Dissipation :

2W

Frequency :

170MHz