ZXTP717MATA
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- Mfr.Part #
- ZXTP717MATA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS PNP 12V 4.5A 3DFN
- Stock
- 17,635
- In Stock ：
- 17,635
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 4A
- REACH SVHC :
- No SVHC
- Case Connection :
- COLLECTOR
- Continuous Collector Current :
- -4A
- Length :
- 2.08mm
- Factory Lead Time :
- 17 Weeks
- Max Breakdown Voltage :
- 12V
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- -7.5V
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- High Reliability
- Terminal Position :
- Dual
- Width :
- 2.075mm
- Transition Frequency :
- 110MHz
- Height :
- 580μm
- Mount :
- Surface Mount
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Frequency :
- 110MHz
- Collector Emitter Voltage (VCEO) :
- 12V
- Collector Base Voltage (VCBO) :
- 20V
- Transistor Application :
- SWITCHING
- Published :
- 2016
- Max Power Dissipation :
- 2.45W
- Power - Max :
- 3W
- Vce Saturation (Max) @ Ib, Ic :
- 310mV @ 150mA, 4A
- Packaging :
- Digi-Reel®
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA
- JESD-609 Code :
- e4
- Power Dissipation :
- 2.45W
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 110MHz
- Current - Collector (Ic) (Max) :
- 4.5A
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- -310mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency - Transition :
- 100MHz
- Package / Case :
- 3-UDFN Exposed Pad
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 12V
- Datasheets
- ZXTP717MATA
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP 3-UDFN Exposed Pad Digi-Reel® Surface Mount
ZXTP717MATA Overview
This device has a DC current gain of 300 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -310mV.A VCE saturation (Max) of 310mV @ 150mA, 4A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -4A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -7.5V.As you can see, the part has a transition frequency of 110MHz.A breakdown input voltage of 12V volts can be used.A maximum collector current of 4A volts is possible.
ZXTP717MATA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of -310mV
the vce saturation(Max) is 310mV @ 150mA, 4A
the emitter base voltage is kept at -7.5V
a transition frequency of 110MHz
ZXTP717MATA Applications
There are a lot of Diodes Incorporated
ZXTP717MATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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