ZXTP19020DGTA
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- Mfr.Part #
- ZXTP19020DGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 20V 8A SOT223-3
- Stock
- 20,084
- In Stock ：
- 20,084
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 7V
- Max Collector Current :
- 8A
- Number of Terminations :
- 4
- Number of Pins :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 176MHz
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 176MHz
- Length :
- 6.7mm
- REACH SVHC :
- No SVHC
- Transistor Type :
- PNP
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- PNP
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-261-4, TO-261AA
- Max Breakdown Voltage :
- 20V
- Terminal Finish :
- Matte Tin (Sn)
- Lead Free :
- Lead Free
- Factory Lead Time :
- 15 Weeks
- Pin Count :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 275mV @ 800mA, 8A
- Collector Emitter Breakdown Voltage :
- 20V
- hFE Min :
- 300
- ECCN Code :
- EAR99
- Weight :
- 7.994566mg
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 25V
- Max Frequency :
- 176MHz
- Height :
- 1.65mm
- Collector Emitter Voltage (VCEO) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2007
- Power - Max :
- 3W
- Radiation Hardening :
- No
- Width :
- 3.7mm
- Collector Emitter Saturation Voltage :
- 275mV
- Terminal Position :
- Dual
- Max Power Dissipation :
- 5.3W
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Base Part Number :
- ZXTP19020D
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- No
- Datasheets
- ZXTP19020DGTA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTP19020DGTA Overview
DC current gain in this device equals 300 @ 100mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 275mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 275mV @ 800mA, 8A.An emitter's base voltage can be kept at 7V to gain high efficiency.As a result, the part has a transition frequency of 176MHz.Breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 8A volts.
ZXTP19020DGTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 275mV
the vce saturation(Max) is 275mV @ 800mA, 8A
the emitter base voltage is kept at 7V
a transition frequency of 176MHz
ZXTP19020DGTA Applications
There are a lot of Diodes Incorporated
ZXTP19020DGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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