ZXTP03200BGTA
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- Mfr.Part #
- ZXTP03200BGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 200V 2A SOT223-3
- Stock
- 641
- In Stock ：
- 641
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Max Power Dissipation :
- 1.25W
- Pin Count :
- 4
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 200V
- Collector Base Voltage (VCBO) :
- -220V
- Collector Emitter Voltage (VCEO) :
- 275mV
- Published :
- 2008
- Vce Saturation (Max) @ Ib, Ic :
- 275mV @ 400mA, 2A
- Emitter Base Voltage (VEBO) :
- -7V
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 5V
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-261-4, TO-261AA
- Gain Bandwidth Product :
- 105MHz
- Collector Emitter Saturation Voltage :
- -37mV
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 7.994566mg
- Number of Pins :
- 4
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Number of Terminations :
- 4
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 15 Weeks
- Pbfree Code :
- No
- Collector Emitter Breakdown Voltage :
- 200V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power - Max :
- 1.25W
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Type :
- PNP
- Max Collector Current :
- 2A
- REACH SVHC :
- No SVHC
- Datasheets
- ZXTP03200BGTA
PNP -55°C~150°C TJ 50nA ICBO 4 Terminations PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTP03200BGTA Overview
This device has a DC current gain of 100 @ 1A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -37mV.A VCE saturation (Max) of 275mV @ 400mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -7V.A breakdown input voltage of 200V volts can be used.A maximum collector current of 2A volts is possible.
ZXTP03200BGTA Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of -37mV
the vce saturation(Max) is 275mV @ 400mA, 2A
the emitter base voltage is kept at -7V
ZXTP03200BGTA Applications
There are a lot of Diodes Incorporated
ZXTP03200BGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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