ZXTP2025FTA
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- Mfr.Part #
- ZXTP2025FTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 5A SOT23-3
- Stock
- 6,920
- In Stock ：
- 6,920
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Junction Temperature (Tj) :
- 150°C
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- ZXTP2025
- JESD-609 Code :
- e3
- Width :
- 1.4mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- ECCN Code :
- EAR99
- Frequency :
- 190MHz
- Number of Elements :
- 1
- Current - Collector (Ic) (Max) :
- 5A
- Number of Terminations :
- 3
- Weight :
- 7.994566mg
- Voltage - Rated DC :
- -50V
- hFE Min :
- 12
- Power - Max :
- 1.2W
- Collector Emitter Breakdown Voltage :
- 70V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Length :
- 3.05mm
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 500mA, 5A
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 190MHz
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Max Collector Current :
- -5A
- Factory Lead Time :
- 15 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 1W
- Mount :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Form :
- Gull wing
- Current Rating :
- -5A
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- -150mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Collector Base Voltage (VCBO) :
- -50V
- Height :
- 1.1mm
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 50V
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- -50V
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Published :
- 2006
- Max Power Dissipation :
- 1.56W
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- -7V
- Transition Frequency :
- 190MHz
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Datasheets
- ZXTP2025FTA
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTP2025FTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 500mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -150mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 500mA, 5A.The emitter base voltage can be kept at -7V for high efficiency.The current rating of this fuse is -5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 190MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as -5A volts at Single BJT transistors maximum.
ZXTP2025FTA Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 200mV @ 500mA, 5A
the emitter base voltage is kept at -7V
the current rating of this device is -5A
a transition frequency of 190MHz
ZXTP2025FTA Applications
There are a lot of Diodes Incorporated
ZXTP2025FTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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