ZXTP2014GTA
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- Mfr.Part #
- ZXTP2014GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 140V 4A SOT223-3
- Stock
- 13,312
- In Stock ：
- 13,312
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 7V
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- -140V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 5V
- Pin Count :
- 4
- Width :
- 3.7mm
- Factory Lead Time :
- 15 Weeks
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 3W
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Terminal Finish :
- Matte Tin (Sn)
- Number of Pins :
- 4
- Number of Elements :
- 1
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 120MHz
- Terminal Position :
- Dual
- Current Rating :
- -4A
- Collector Emitter Breakdown Voltage :
- 140V
- Collector Emitter Voltage (VCEO) :
- 140V
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 180V
- Transition Frequency :
- 120MHz
- Mounting Type :
- Surface Mount
- Weight :
- 7.994566mg
- Length :
- 6.7mm
- Transistor Application :
- SWITCHING
- Base Part Number :
- ZXTP2014
- Published :
- 2006
- Vce Saturation (Max) @ Ib, Ic :
- 360mV @ 300mA, 3A
- Gain Bandwidth Product :
- 120MHz
- Continuous Collector Current :
- -4A
- JESD-609 Code :
- e3
- Height :
- 1.65mm
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Element Configuration :
- Single
- Number of Terminations :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- TO-261-4, TO-261AA
- Power Dissipation :
- 3W
- Max Breakdown Voltage :
- 140V
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 4A
- Pbfree Code :
- No
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- -275mV
- Case Connection :
- COLLECTOR
- Datasheets
- ZXTP2014GTA
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTP2014GTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -275mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 360mV @ 300mA, 3A.Continuous collector voltages of -4A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is -4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 120MHz.Single BJT transistor can take a breakdown input voltage of 140V volts.During maximum operation, collector current can be as low as 4A volts.
ZXTP2014GTA Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of -275mV
the vce saturation(Max) is 360mV @ 300mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is -4A
a transition frequency of 120MHz
ZXTP2014GTA Applications
There are a lot of Diodes Incorporated
ZXTP2014GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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