ZXTP2012ASTZ
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- Mfr.Part #
- ZXTP2012ASTZ
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS PNP 60V 3.5A E-LINE
- Stock
- 5,596
- In Stock ：
- 5,596
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 120MHz
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Box (TB)
- Emitter Base Voltage (VEBO) :
- 7V
- Terminal Form :
- Wire
- Factory Lead Time :
- 8 Weeks
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 4.01mm
- Width :
- 2.41mm
- Transistor Type :
- PNP
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- hFE Min :
- 100
- Power Dissipation :
- 1W
- Collector Emitter Voltage (VCEO) :
- 60V
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 3.5A
- Element Configuration :
- Single
- Terminal Finish :
- Matte Tin (Sn)
- Max Power Dissipation :
- 1W
- Pbfree Code :
- No
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 100V
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 400mA, 4A
- Max Breakdown Voltage :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Transition Frequency :
- 120MHz
- Published :
- 2006
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Length :
- 4.77mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- -210mV
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 120MHz
- Collector Emitter Breakdown Voltage :
- 60V
- Package / Case :
- E-Line-3, Formed Leads
- Polarity/Channel Type :
- PNP
- Datasheets
- ZXTP2012ASTZ
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PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3, Formed Leads Tape & Box (TB) Through Hole
ZXTP2012ASTZ Overview
DC current gain in this device equals 100 @ 1A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -210mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 210mV @ 400mA, 4A.An emitter's base voltage can be kept at 7V to gain high efficiency.As a result, the part has a transition frequency of 120MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 3.5A volts.
ZXTP2012ASTZ Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -210mV
the vce saturation(Max) is 210mV @ 400mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 120MHz
ZXTP2012ASTZ Applications
There are a lot of Diodes Incorporated
ZXTP2012ASTZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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