ZXTN620MATA
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- Mfr.Part #
- ZXTN620MATA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UDFN
- Datasheet
- Download
- Description
- TRANS NPN 80V 3.5A DFN2020B-3
- Stock
- 23,957
- In Stock ：
- 23,957
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 2.45W
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 340mV
- Continuous Collector Current :
- 3.5A
- Length :
- 2.08mm
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 200mA 2V
- Case Connection :
- COLLECTOR
- Base Part Number :
- ZXTN620MA
- JESD-609 Code :
- e4
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Dual
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 160MHz
- Width :
- 2.075mm
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Additional Feature :
- High Reliability
- Factory Lead Time :
- 15 Weeks
- Max Power Dissipation :
- 2.45W
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Height :
- 580μm
- Max Collector Current :
- 3.8A
- Collector Emitter Breakdown Voltage :
- 80V
- Collector Base Voltage (VCBO) :
- 100V
- Max Breakdown Voltage :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 325mV @ 300mA, 3.5A
- Power - Max :
- 3W
- Frequency :
- 160MHz
- Collector Emitter Voltage (VCEO) :
- 80V
- Emitter Base Voltage (VEBO) :
- 7V
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Published :
- 2002
- Current - Collector Cutoff (Max) :
- 25nA
- Mount :
- Surface Mount
- Packaging :
- Digi-Reel®
- Pin Count :
- 3
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 160MHz
- Package / Case :
- 3-UDFN
- Pbfree Code :
- yes
- Datasheets
- ZXTN620MATA
NPN -55°C~150°C TJ 25nA 1 Elements 3 Terminations SILICON NPN 3-UDFN Digi-Reel® Surface Mount
ZXTN620MATA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 200mA 2V DC current gain.As it features a collector emitter saturation voltage of 340mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 3.5A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 160MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 3.8A volts.
ZXTN620MATA Features
the DC current gain for this device is 300 @ 200mA 2V
a collector emitter saturation voltage of 340mV
the vce saturation(Max) is 325mV @ 300mA, 3.5A
the emitter base voltage is kept at 7V
a transition frequency of 160MHz
ZXTN620MATA Applications
There are a lot of Diodes Incorporated
ZXTN620MATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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