ZXTN04120HKTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

-55°C~150°C TJ

Case Connection :

COLLECTOR

Radiation Hardening :

No

Number of Elements :

1

Transistor Type :

NPN - Darlington

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 1mA, 1A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

140V

Mount :

Surface Mount

Gain Bandwidth Product :

150MHz

Transistor Element Material :

SILICON

Max Breakdown Voltage :

120V

Collector Emitter Voltage (VCEO) :

120V

Max Power Dissipation :

1.5W

Collector Emitter Breakdown Voltage :

120V

Additional Feature :

High Reliability

Transition Frequency :

150MHz

Max Collector Current :

1.5A

Reference Standard :

AEC-Q101

Emitter Base Voltage (VEBO) :

14V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Published :

2014

Factory Lead Time :

15 Weeks

JESD-609 Code :

e3

hFE Min :

500

Element Configuration :

Single

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Polarity :

NPN

RoHS Status :

ROHS3 Compliant

Weight :

200.005886mg

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

100nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 1A 5V

Number of Terminations :

2

Continuous Collector Current :

1.5A

Number of Pins :

2

Terminal Form :

Gull wing