ZXTN19055DZTA
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- Mfr.Part #
- ZXTN19055DZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 55V 6A SOT89-3
- Stock
- 9,112
- In Stock ：
- 9,112
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Length :
- 4.6mm
- Number of Terminations :
- 6
- Height :
- 1.6mm
- Collector Emitter Breakdown Voltage :
- 55V
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 4
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Factory Lead Time :
- 15 Weeks
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 2.1W
- Terminal Finish :
- Matte Tin (Sn)
- Power Dissipation :
- 2.1W
- JESD-30 Code :
- R-PDSO-F6
- Max Breakdown Voltage :
- 55V
- Collector Base Voltage (VCBO) :
- 150V
- Pin Count :
- 6
- Lead Free :
- Lead Free
- Frequency :
- 200MHz
- ECCN Code :
- EAR99
- Package / Case :
- TO-243AA
- Terminal Form :
- Flat
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 600mA, 6A
- Base Part Number :
- ZXTN19055
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 10mA 2V
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Emitter Saturation Voltage :
- 250mV
- Current Rating :
- 6A
- Gain Bandwidth Product :
- 200MHz
- Voltage - Rated DC :
- 55V
- Weight :
- 51.993025mg
- Transition Frequency :
- 200MHz
- Published :
- 2006
- Max Collector Current :
- 6A
- Width :
- 2.6mm
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 55V
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Datasheets
- ZXTN19055DZTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 6 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
ZXTN19055DZTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 10mA 2V DC current gain.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 200MHz in the part.Single BJT transistor can be broken down at a voltage of 55V volts.When collector current reaches its maximum, it can reach 6A volts.
ZXTN19055DZTA Features
the DC current gain for this device is 250 @ 10mA 2V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 600mA, 6A
the emitter base voltage is kept at 7V
the current rating of this device is 6A
a transition frequency of 200MHz
ZXTN19055DZTA Applications
There are a lot of Diodes Incorporated
ZXTN19055DZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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