ZXTN25050DFHTA
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- Mfr.Part #
- ZXTN25050DFHTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 4A SOT23-3
- Stock
- 30,197
- In Stock ：
- 30,197
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 50V
- Max Breakdown Voltage :
- 50V
- Max Collector Current :
- 4A
- Number of Terminations :
- 3
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 400mA, 4A
- JESD-609 Code :
- e3
- Transition Frequency :
- 200MHz
- Polarity/Channel Type :
- NPN
- Continuous Collector Current :
- 4A
- Transistor Element Material :
- SILICON
- Current Rating :
- 4A
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 1.81W
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Weight :
- 7.994566mg
- hFE Min :
- 300
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- 260mV
- Number of Pins :
- 3
- Published :
- 2006
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 50V
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Voltage - Rated DC :
- 50V
- Transistor Application :
- SWITCHING
- Length :
- 3.05mm
- Gain Bandwidth Product :
- 200MHz
- Max Power Dissipation :
- 1.25W
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 200MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Finish :
- Matte Tin (Sn)
- Factory Lead Time :
- 15 Weeks
- Emitter Base Voltage (VEBO) :
- 7V
- Width :
- 1.4mm
- Height :
- 1mm
- Collector Base Voltage (VCBO) :
- 150V
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Base Part Number :
- ZXTN25050
- Datasheets
- ZXTN25050DFHTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTN25050DFHTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 10mA 2V.The collector emitter saturation voltage is 260mV, which allows for maximum design flexibility.When VCE saturation is 210mV @ 400mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 4A for high efficiency.Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.In the part, the transition frequency is 200MHz.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 4A volts can be achieved.
ZXTN25050DFHTA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 260mV
the vce saturation(Max) is 210mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is 4A
a transition frequency of 200MHz
ZXTN25050DFHTA Applications
There are a lot of Diodes Incorporated
ZXTN25050DFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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