ZXTN25012EFHTA
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- Mfr.Part #
- ZXTN25012EFHTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 12V 6A SOT23-3
- Stock
- 43,571
- In Stock ：
- 43,571
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 7V
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 260MHz
- Polarity/Channel Type :
- NPN
- hFE Min :
- 500
- Collector Base Voltage (VCBO) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1.81W
- Max Collector Current :
- 6A
- Length :
- 3.05mm
- Gain Bandwidth Product :
- 260MHz
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Height :
- 1mm
- Collector Emitter Breakdown Voltage :
- 12V
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 12V
- Vce Saturation (Max) @ Ib, Ic :
- 190mV @ 120mA, 6A
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 1.25W
- Element Configuration :
- Single
- Published :
- 2006
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Pin Count :
- 3
- Weight :
- 7.994566mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 10mA 2V
- Max Breakdown Voltage :
- 12V
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Factory Lead Time :
- 15 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Saturation Voltage :
- 190mV
- Continuous Collector Current :
- 6A
- Frequency :
- 260MHz
- Terminal Finish :
- Matte Tin (Sn)
- Width :
- 1.4mm
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Base Part Number :
- ZXTN25012E
- ECCN Code :
- EAR99
- Datasheets
- ZXTN25012EFHTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTN25012EFHTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 500 @ 10mA 2V DC current gain.As it features a collector emitter saturation voltage of 190mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 6A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.There is a transition frequency of 260MHz in the part.Single BJT transistor can be broken down at a voltage of 12V volts.When collector current reaches its maximum, it can reach 6A volts.
ZXTN25012EFHTA Features
the DC current gain for this device is 500 @ 10mA 2V
a collector emitter saturation voltage of 190mV
the vce saturation(Max) is 190mV @ 120mA, 6A
the emitter base voltage is kept at 7V
a transition frequency of 260MHz
ZXTN25012EFHTA Applications
There are a lot of Diodes Incorporated
ZXTN25012EFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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