ZXTN2005GTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Voltage - Rated DC :

25V

Polarity/Channel Type :

NPN

Collector Emitter Breakdown Voltage :

25V

Power Dissipation :

3W

Package / Case :

TO-261-4, TO-261AA

Collector Base Voltage (VCBO) :

60V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

REACH SVHC :

No SVHC

Radiation Hardening :

No

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

NPN

Frequency :

150MHz

Max Breakdown Voltage :

25V

Vce Saturation (Max) @ Ib, Ic :

230mV @ 150mA, 6.5A

Transistor Element Material :

SILICON

Max Power Dissipation :

3W

Height :

1.65mm

Pbfree Code :

No

Terminal Position :

Dual

Emitter Base Voltage (VEBO) :

7V

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1A 1V

Current - Collector Cutoff (Max) :

50nA ICBO

Mounting Type :

Surface Mount

Number of Terminations :

4

Lead Free :

Lead Free

Pin Count :

4

Number of Pins :

4

JESD-609 Code :

e3

Length :

6.7mm

Factory Lead Time :

15 Weeks

Packaging :

Tape and Reel (TR)

Max Collector Current :

7A

Width :

3.7mm

Collector Emitter Voltage (VCEO) :

25V

Current Rating :

7A

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Base Part Number :

ZXTN2005

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Published :

2006

Transition Frequency :

150MHz

Continuous Collector Current :

7A

Weight :

7.994566mg

Case Connection :

COLLECTOR

Terminal Form :

Gull wing

Gain Bandwidth Product :

150MHz