ZXT12P40DXTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Power - Max :

1.04W

Width :

3.1mm

Collector Emitter Voltage (VCEO) :

40V

Lead Free :

Lead Free

Voltage - Rated DC :

-40V

Base Part Number :

ZXT12P40D

Weight :

139.989945mg

Mount :

Surface Mount

Terminal Form :

Gull wing

Power Dissipation :

1.25W

Peak Reflow Temperature (Cel) :

260

Frequency :

130MHz

Pin Count :

8

Transistor Element Material :

SILICON

Polarity :

PNP

Transistor Application :

SWITCHING

Pbfree Code :

yes

Factory Lead Time :

15 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1A 2V

Published :

2006

Operating Temperature :

-55°C~150°C TJ

Current Rating :

-2A

Current - Collector Cutoff (Max) :

100nA

Number of Terminations :

8

Max Breakdown Voltage :

40V

Terminal Finish :

Matte Tin (Sn)

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Mounting Type :

Surface Mount

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

8

Length :

3.1mm

Gain Bandwidth Product :

130MHz

Collector Emitter Saturation Voltage :

-150mV

Collector Emitter Breakdown Voltage :

40V

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

7.5V

Transition Frequency :

130MHz

Max Power Dissipation :

1.25W

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Transistor Type :

2 PNP (Dual)

Packaging :

Tape and Reel (TR)

Height :

950μm

Vce Saturation (Max) @ Ib, Ic :

260mV @ 100mA, 2A

Max Collector Current :

2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

JESD-609 Code :

e3

Continuous Collector Current :

-2.5A

Collector Base Voltage (VCBO) :

50V