ZXT12P40DXTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1A 2V

Frequency :

130MHz

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Factory Lead Time :

15 Weeks

Height :

950μm

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Collector Base Voltage (VCBO) :

50V

Collector Emitter Breakdown Voltage :

40V

Max Collector Current :

2A

Published :

2006

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

-2A

Continuous Collector Current :

-2.5A

Transistor Element Material :

SILICON

Polarity :

PNP

Collector Emitter Saturation Voltage :

-150mV

Power - Max :

1.04W

Base Part Number :

ZXT12P40D

Gain Bandwidth Product :

130MHz

Max Breakdown Voltage :

40V

Emitter Base Voltage (VEBO) :

7.5V

Packaging :

Tape and Reel (TR)

Transistor Type :

2 PNP (Dual)

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Rated DC :

-40V

Current - Collector Cutoff (Max) :

100nA

Peak Reflow Temperature (Cel) :

260

Weight :

139.989945mg

Vce Saturation (Max) @ Ib, Ic :

260mV @ 100mA, 2A

Power Dissipation :

1.25W

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Dual

Pin Count :

8

Transition Frequency :

130MHz

JESD-609 Code :

e3

Radiation Hardening :

No

Mount :

Surface Mount

Lead Free :

Lead Free

Number of Elements :

2

Collector Emitter Voltage (VCEO) :

40V

Length :

3.1mm

Width :

3.1mm

Terminal Form :

Gull wing

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Max Power Dissipation :

1.25W

Number of Terminations :

8