ZXT12P40DXTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Weight :

139.989945mg

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

yes

Height :

950μm

Published :

2006

Packaging :

Tape and Reel (TR)

Max Breakdown Voltage :

40V

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Dual

Transistor Type :

2 PNP (Dual)

Base Part Number :

ZXT12P40D

Mount :

Surface Mount

Power Dissipation :

1.25W

Number of Pins :

8

Pin Count :

8

Emitter Base Voltage (VEBO) :

7.5V

Lead Free :

Lead Free

Continuous Collector Current :

-2.5A

Collector Emitter Breakdown Voltage :

40V

Transition Frequency :

130MHz

Factory Lead Time :

15 Weeks

Voltage - Rated DC :

-40V

Collector Emitter Saturation Voltage :

-150mV

ECCN Code :

EAR99

Gain Bandwidth Product :

130MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity :

PNP

Peak Reflow Temperature (Cel) :

260

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1A 2V

Collector Base Voltage (VCBO) :

50V

Max Power Dissipation :

1.25W

Length :

3.1mm

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

260mV @ 100mA, 2A

Current Rating :

-2A

Collector Emitter Voltage (VCEO) :

40V

JESD-609 Code :

e3

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

100nA

Max Collector Current :

2A

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

2

Width :

3.1mm

Frequency :

130MHz

Power - Max :

1.04W

Number of Terminations :

8