ZXT10P40DE6TA
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- Mfr.Part #
- ZXT10P40DE6TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 40V 2A SOT23-6
- Stock
- 407
- In Stock ：
- 407
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Number of Terminations :
- 6
- Current Rating :
- -2A
- Base Part Number :
- ZXT10P40D
- Factory Lead Time :
- 15 Weeks
- Package / Case :
- SOT-23-6
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 1.8mm
- Height :
- 1.3mm
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 1.1W
- Mount :
- Surface Mount
- Published :
- 2006
- Power Dissipation :
- 1.7W
- Current - Collector Cutoff (Max) :
- 100nA
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 40V
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 40V
- Continuous Collector Current :
- -2A
- Terminal Finish :
- Matte Tin (Sn)
- Max Collector Current :
- 2A
- Transition Frequency :
- 190MHz
- Collector Emitter Voltage (VCEO) :
- 40V
- Gain Bandwidth Product :
- 190MHz
- Pin Count :
- 6
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 40V
- Weight :
- 14.996898mg
- Collector Emitter Saturation Voltage :
- -210mV
- Power - Max :
- 1.1W
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Number of Elements :
- 1
- Number of Pins :
- 6
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 1A 2V
- Emitter Base Voltage (VEBO) :
- 5V
- Length :
- 3.1mm
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Frequency :
- 190MHz
- Voltage - Rated DC :
- -40V
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Datasheets
- ZXT10P40DE6TA
PNP -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-23-6 Tape & Reel (TR) Surface Mount
ZXT10P40DE6TA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 180 @ 1A 2V DC current gain.As it features a collector emitter saturation voltage of -210mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -2A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 190MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 2A volts.
ZXT10P40DE6TA Features
the DC current gain for this device is 180 @ 1A 2V
a collector emitter saturation voltage of -210mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 190MHz
ZXT10P40DE6TA Applications
There are a lot of Diodes Incorporated
ZXT10P40DE6TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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