ZXT10P12DE6TA
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- Mfr.Part #
- ZXT10P12DE6TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 12V 3A SOT23-6
- Stock
- 18,534
- In Stock ：
- 18,534
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 1.1W
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 1.7W
- Published :
- 2006
- Max Breakdown Voltage :
- 12V
- Pin Count :
- 6
- Number of Terminations :
- 6
- Width :
- 1.75mm
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 180
- Collector Emitter Breakdown Voltage :
- 12V
- Termination :
- SMD/SMT
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Current Rating :
- -3A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Base Part Number :
- ZXT10P12D
- Collector Base Voltage (VCBO) :
- 12V
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 3A
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Weight :
- 14.996898mg
- Frequency :
- 110MHz
- Terminal Form :
- Gull wing
- Voltage - Rated DC :
- -12V
- Factory Lead Time :
- 16 Weeks
- Height :
- 1.3mm
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 12V
- Terminal Position :
- Dual
- Package / Case :
- SOT-23-6
- Max Power Dissipation :
- 1.1W
- Number of Pins :
- 6
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- -195mV
- Max Collector Current :
- 3A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 110MHz
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 110MHz
- Length :
- 3mm
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Continuous Collector Current :
- -3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- ZXT10P12DE6TA
PNP -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-23-6 Tape & Reel (TR) Surface Mount
ZXT10P12DE6TA Overview
In this device, the DC current gain is 300 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -195mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 50mA, 3A.A -3A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 110MHz.Input voltage breakdown is available at 12V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
ZXT10P12DE6TA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of -195mV
the vce saturation(Max) is 300mV @ 50mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 110MHz
ZXT10P12DE6TA Applications
There are a lot of Diodes Incorporated
ZXT10P12DE6TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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