ZXT11N15DFTA
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- Mfr.Part #
- ZXT11N15DFTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 15V 3A SOT23-3
- Stock
- 16,479
- In Stock ：
- 16,479
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2006
- Transistor Type :
- NPN
- Base Part Number :
- ZXT11N15D
- Max Collector Current :
- 3A
- Collector Base Voltage (VCBO) :
- 40V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Breakdown Voltage :
- 15V
- Number of Terminations :
- 3
- Max Power Dissipation :
- 625mW
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Frequency :
- 145MHz
- Collector Emitter Breakdown Voltage :
- 15V
- Gain Bandwidth Product :
- 145MHz
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Continuous Collector Current :
- 3A
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 150mA, 3A
- Transition Frequency :
- 145MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mount :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Element Configuration :
- Single
- Power Dissipation :
- 806mW
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Width :
- 1.4mm
- Weight :
- 7.994566mg
- Emitter Base Voltage (VEBO) :
- 7.5V
- Polarity/Channel Type :
- NPN
- Voltage - Rated DC :
- 15V
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 3.05mm
- Height :
- 1mm
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Saturation Voltage :
- 110mV
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 15V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 200mA 2V
- Lead Free :
- Lead Free
- Current Rating :
- 3.3A
- Current - Collector Cutoff (Max) :
- 100nA
- Terminal Position :
- Dual
- Datasheets
- ZXT11N15DFTA
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXT11N15DFTA Overview
In this device, the DC current gain is 300 @ 200mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 110mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 150mV @ 150mA, 3A.A 3A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 7.5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3.3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 145MHz.Input voltage breakdown is available at 15V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
ZXT11N15DFTA Features
the DC current gain for this device is 300 @ 200mA 2V
a collector emitter saturation voltage of 110mV
the vce saturation(Max) is 150mV @ 150mA, 3A
the emitter base voltage is kept at 7.5V
the current rating of this device is 3.3A
a transition frequency of 145MHz
ZXT11N15DFTA Applications
There are a lot of Diodes Incorporated
ZXT11N15DFTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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