ZXT12P20DXTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Height :

950μm

Current - Collector Cutoff (Max) :

100nA

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

260

Emitter Base Voltage (VEBO) :

7.5V

Pbfree Code :

yes

Current Rating :

-2.5A

Max Power Dissipation :

1.04W

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

20V

Max Collector Current :

2.5A

Max Breakdown Voltage :

20V

Transition Frequency :

110MHz

Operating Temperature :

-55°C~150°C TJ

Gain Bandwidth Product :

110MHz

Qualification Status :

Not Qualified

Vce Saturation (Max) @ Ib, Ic :

200mV @ 125mA, 2.5A

Power - Max :

1.04W

Mounting Type :

Surface Mount

Lead Free :

Contains Lead

Collector Base Voltage (VCBO) :

-25V

Base Part Number :

ZXT12P20D

Collector Emitter Saturation Voltage :

-160mV

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Weight :

139.989945mg

Element Configuration :

Dual

Pin Count :

8

Terminal Form :

Gull wing

Mount :

Surface Mount

Continuous Collector Current :

-2.5A

JESD-30 Code :

S-PDSO-G8

Number of Elements :

2

Number of Terminations :

8

Terminal Finish :

Matte Tin (Sn)

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1A 2V

Length :

3.1mm

Voltage - Rated DC :

-20V

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Polarity :

PNP

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

2 PNP (Dual)

JESD-609 Code :

e3

JEDEC-95 Code :

MO-187AA

Width :

3.1mm

Collector Emitter Voltage (VCEO) :

200mV