ZXT12P12DXTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Base Part Number :

ZXT12P12D

Weight :

139.989945mg

Current - Collector (Ic) (Max) :

3A

Width :

3.1mm

Collector Base Voltage (VCBO) :

-20V

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1A 2V

Max Collector Current :

3A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

-3A

Transition Frequency :

85MHz

Transistor Type :

2 PNP (Dual)

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Terminal Form :

Gull wing

Element Configuration :

Dual

Continuous Collector Current :

-3A

Number of Elements :

2

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

S-PDSO-G8

Lead Free :

Lead Free

Gain Bandwidth Product :

85MHz

Voltage - Rated DC :

-12V

Time@Peak Reflow Temperature-Max (s) :

40

JEDEC-95 Code :

MO-187AA

Collector Emitter Voltage (VCEO) :

270mV

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

1.04W

Height :

950μm

JESD-609 Code :

e3

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

12V

Collector Emitter Saturation Voltage :

-140mV

Emitter Base Voltage (VEBO) :

7.5V

Polarity :

PNP

Qualification Status :

Not Qualified

Pin Count :

8

RoHS Status :

RoHS Compliant

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Mount :

Surface Mount

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

270mV @ 30mA, 3A

Current - Collector Cutoff (Max) :

100nA

Length :

3.1mm

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ