ZXT12P12DXTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Transistor Type :

2 PNP (Dual)

Current Rating :

-3A

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Voltage - Rated DC :

-12V

Time@Peak Reflow Temperature-Max (s) :

40

Length :

3.1mm

Vce Saturation (Max) @ Ib, Ic :

270mV @ 30mA, 3A

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Radiation Hardening :

No

Max Breakdown Voltage :

12V

Power Dissipation :

1.25W

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Collector Current :

-3A

Transistor Application :

SWITCHING

Frequency :

85MHz

Pbfree Code :

yes

Number of Pins :

8

Current - Collector Cutoff (Max) :

100nA

Gain Bandwidth Product :

85MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1A 2V

Max Power Dissipation :

1.25W

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

7.5V

Polarity :

PNP

Height :

950μm

Mount :

Surface Mount

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

12V

Transition Frequency :

85MHz

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

20V

Factory Lead Time :

10 Weeks

Weight :

139.989945mg

Published :

2006

Base Part Number :

ZXT12P12D

Element Configuration :

Dual

Operating Temperature :

-55°C~150°C TJ

Width :

3.1mm

Number of Elements :

2

Power - Max :

1.04W

Collector Emitter Saturation Voltage :

-150mV

Peak Reflow Temperature (Cel) :

260

Pin Count :

8

Collector Emitter Breakdown Voltage :

12V

Max Collector Current :

3A