ZXT12P12DXTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Power Dissipation :

1.25W

Gain Bandwidth Product :

85MHz

Transistor Application :

SWITCHING

Transistor Type :

2 PNP (Dual)

Vce Saturation (Max) @ Ib, Ic :

270mV @ 30mA, 3A

Operating Temperature :

-55°C~150°C TJ

Weight :

139.989945mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006

Pin Count :

8

Max Collector Current :

3A

Number of Pins :

8

Voltage - Rated DC :

-12V

Mounting Type :

Surface Mount

Pbfree Code :

yes

ECCN Code :

EAR99

Frequency :

85MHz

Base Part Number :

ZXT12P12D

Collector Emitter Saturation Voltage :

-150mV

Factory Lead Time :

10 Weeks

Mount :

Surface Mount

Lead Free :

Lead Free

Power Dissipation :

1.25W

Number of Elements :

2

Collector Emitter Breakdown Voltage :

12V

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Peak Reflow Temperature (Cel) :

260

Power - Max :

1.04W

Time@Peak Reflow Temperature-Max (s) :

40

Transition Frequency :

85MHz

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Number of Terminations :

8

Height :

950μm

Continuous Collector Current :

-3A

Element Configuration :

Dual

Terminal Finish :

Matte Tin (Sn)

Polarity :

PNP

Collector Emitter Voltage (VCEO) :

12V

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

7.5V

Current - Collector Cutoff (Max) :

100nA

Terminal Form :

Gull wing

Collector Base Voltage (VCBO) :

20V

JESD-609 Code :

e3

Radiation Hardening :

No

Length :

3.1mm

Width :

3.1mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1A 2V

Max Breakdown Voltage :

12V

Current Rating :

-3A