ZXT12P12DXTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Pbfree Code :

yes

Length :

3.1mm

Gain Bandwidth Product :

85MHz

Frequency :

85MHz

Height :

950μm

Transistor Type :

2 PNP (Dual)

JESD-609 Code :

e3

Published :

2006

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

10 Weeks

Max Breakdown Voltage :

12V

Emitter Base Voltage (VEBO) :

7.5V

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1A 2V

Max Collector Current :

3A

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

8

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Width :

3.1mm

Transistor Application :

SWITCHING

Collector Emitter Saturation Voltage :

-150mV

Continuous Collector Current :

-3A

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Transition Frequency :

85MHz

Weight :

139.989945mg

Voltage - Rated DC :

-12V

Collector Emitter Breakdown Voltage :

12V

Vce Saturation (Max) @ Ib, Ic :

270mV @ 30mA, 3A

Base Part Number :

ZXT12P12D

Collector Emitter Voltage (VCEO) :

12V

Current - Collector Cutoff (Max) :

100nA

Pin Count :

8

ECCN Code :

EAR99

Power - Max :

1.04W

Radiation Hardening :

No

Power Dissipation :

1.25W

Polarity :

PNP

Terminal Form :

Gull wing

Max Power Dissipation :

1.25W

Collector Base Voltage (VCBO) :

20V

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

8

Element Configuration :

Dual

Terminal Finish :

Matte Tin (Sn)

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Mounting Type :

Surface Mount

Current Rating :

-3A