ZXT12N50DXTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Breakdown Voltage :

50V

Power Dissipation :

1.25W

Mount :

Surface Mount

Base Part Number :

ZXT12N50D

Published :

2006

Width :

3.1mm

Mounting Type :

Surface Mount

Number of Terminations :

8

Pin Count :

8

Transistor Type :

2 NPN (Dual)

Current - Collector Cutoff (Max) :

100nA

Continuous Collector Current :

3A

Current Rating :

3A

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1A 2V

JESD-609 Code :

e3

Number of Pins :

8

Pbfree Code :

yes

Frequency :

132MHz

Max Collector Current :

3A

Polarity :

NPN

Transistor Application :

SWITCHING

Radiation Hardening :

No

Max Breakdown Voltage :

50V

Length :

3.1mm

Peak Reflow Temperature (Cel) :

260

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Time@Peak Reflow Temperature-Max (s) :

40

Max Power Dissipation :

1.25W

Transition Frequency :

132MHz

Operating Temperature :

-55°C~150°C TJ

Weight :

139.989945mg

Factory Lead Time :

15 Weeks

Element Configuration :

Dual

Collector Emitter Voltage (VCEO) :

50V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Height :

950μm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

50V

Collector Base Voltage (VCBO) :

100V

Power - Max :

1.04W

Terminal Form :

Gull wing

Number of Elements :

2

Vce Saturation (Max) @ Ib, Ic :

250mV @ 50mA, 3A

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

135mV

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Gain Bandwidth Product :

132MHz

Terminal Finish :

Matte Tin (Sn)

Emitter Base Voltage (VEBO) :

7.5V