ZXT12N20DXTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Pin Count :

8

Length :

3.1mm

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Number of Elements :

2

Weight :

139.989945mg

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

7.5V

Continuous Collector Current :

3.5A

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

200mV @ 50mA, 3.5A

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Power - Max :

1.04W

Number of Pins :

8

Frequency :

112MHz

Voltage - Rated DC :

20V

Max Breakdown Voltage :

20V

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

ZXT12N20D

Transistor Application :

SWITCHING

Transistor Type :

2 NPN (Dual)

Power Dissipation :

1.25W

Element Configuration :

Dual

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 1A 2V

Gain Bandwidth Product :

112MHz

Collector Emitter Voltage (VCEO) :

20V

Max Power Dissipation :

1.25W

Published :

2006

Collector Base Voltage (VCBO) :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

3.1mm

JESD-609 Code :

e3

Current Rating :

3.5A

Number of Terminations :

8

Factory Lead Time :

15 Weeks

Radiation Hardening :

No

Transition Frequency :

112MHz

Polarity :

NPN

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

100nA

Terminal Finish :

Matte Tin (Sn)

Collector Emitter Breakdown Voltage :

20V

Collector Emitter Saturation Voltage :

160mV

Pbfree Code :

yes

Height :

950μm

Max Collector Current :

3.5A