ZXT11N20DFTA
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- Mfr.Part #
- ZXT11N20DFTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 20V 2.5A SOT23-3
- Stock
- 1,801
- In Stock ：
- 1,801
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 20V
- Base Part Number :
- ZXT11N20D
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Terminal Form :
- Gull wing
- Current Rating :
- 2.5A
- Collector Emitter Voltage (VCEO) :
- 20V
- Voltage - Rated DC :
- 20V
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Frequency :
- 160MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Type :
- Surface Mount
- Continuous Collector Current :
- 2.5A
- Power Dissipation :
- 806mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Collector Base Voltage (VCBO) :
- 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Factory Lead Time :
- 15 Weeks
- Pin Count :
- 3
- Max Power Dissipation :
- 625mW
- Polarity/Channel Type :
- NPN
- Mount :
- Surface Mount
- Published :
- 2006
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- 90mV
- Weight :
- 7.994566mg
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 1.4mm
- Height :
- 1mm
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Length :
- 3.05mm
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Max Collector Current :
- 2.5A
- Vce Saturation (Max) @ Ib, Ic :
- 130mV @ 250mA, 2.5A
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 20V
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 7.5V
- Gain Bandwidth Product :
- 160MHz
- Transition Frequency :
- 160MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- ZXT11N20DFTA
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXT11N20DFTA Overview
DC current gain in this device equals 300 @ 100mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 90mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 130mV @ 250mA, 2.5A.Single BJT transistor is essential to maintain the continuous collector voltage at 2.5A to achieve high efficiency.An emitter's base voltage can be kept at 7.5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 2.5A current rating.As a result, the part has a transition frequency of 160MHz.Breakdown input voltage is 20V volts.In extreme cases, the collector current can be as low as 2.5A volts.
ZXT11N20DFTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 130mV @ 250mA, 2.5A
the emitter base voltage is kept at 7.5V
the current rating of this device is 2.5A
a transition frequency of 160MHz
ZXT11N20DFTA Applications
There are a lot of Diodes Incorporated
ZXT11N20DFTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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